Atomic Object Confinement Apparatus with Damascene Surface Electrodes

A method for fabricating an atomic object confinement apparatus, the method comprising:

• depositing an interlayer dielectric layer onto a surface of a substrate;
• patterning and etching the interlayer dielectric layer to form a segmented interlayer dielectric layer comprising a plurality of interlayer dielectric walls;
• depositing a bulk metal layer on the substrate and the segmented interlayer dielectric layer;
• and
• selectively etching away the plurality of interlayer dielectric walls to form a plurality of gaps and a plurality of electrodes, wherein respective gaps of the plurality of gaps are disposed between adjacent electrodes of the plurality of electrodes,
• wherein respective exposed surfaces of the plurality of electrodes have root mean square (RMS) roughness of 10 nm or less.