Selectively erasing one of multiple erase blocks coupled to a same string by creating a pseudo pn junction

An apparatus, comprising:

• a memory array comprising a plurality of strings of memory cells, wherein a first string of the plurality of strings is coupled to a sense line on a first end and is coupled to a source line on a second end, and wherein the first string further comprises:
• a first group of memory cells coupled to a first group of access lines and corresponding to a first erase block;
• a second group of memory cells coupled to a second group of access lines and corresponding to a second erase block;
• and
• a first separation region separating the second group of access lines from either the first group of access lines or the source line;
• a controller coupled to the memory array and configured to create, on a first portion of the first string corresponding to the first separation region, a junction that acts as a barrier to a flow of charge carriers in order to selectively erase the second erase block independently of the first erase block.

An apparatus, comprising:

• a memory array comprising a plurality of strings of memory cells, wherein a first string of the plurality of strings is coupled to one or more select gate drain lines on a first end coupled to a sense line and is coupled to one or more select gate source lines on a second end coupled to a source line, the first string further comprises:
• a first group of memory cells coupled to a first group of access lines and corresponding to a first erase block;
• and
• a second group of memory cells coupled to a second group of access lines and corresponding to a second erase block, wherein the first group of access lines and the second group of access lines are separated by a first separation region;
• and
• a controller coupled to the memory array and configured to induce a channel inversion on a first portion of the first string corresponding to the first group of access lines in order to selectively erase the second erase block independently of the first erase block.