Semiconductor storage device and manufacturing method thereof
AssigneeKioxia Corporation
InventorsMasaki NOGUCHI, Kensei TAKAHASHI, Saori MATSUSHITA
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Abstract
A semiconductor storage device according to the present embodiment includes a stack of a plurality of electrode films and a plurality of first insulation films stacked alternately one layer at a time in a first direction. A columnar body includes a semiconductor layer provided to penetrate through the stack in the first direction. A second insulation film is provided between the columnar body and each of the electrode films. A conductive film is provided between each of the electrode films and the second insulation film. The conductive film contains molybdenum (Mo) containing a first material whose concentration is higher than an oxygen concentration.
Claims17
A semiconductor storage device comprising:
- a stack of a plurality of electrode films and a plurality of first insulation films alternately stacked one layer at a time in a first direction;
- a columnar body including a semiconductor layer provided to penetrate through the stack in the first direction;
- a second insulation film provided between the columnar body and each of the electrode films;
- and
- a conductive film provided between each of the electrode films and the second insulation film and containing molybdenum (Mo) containing a first material whose concentration is higher than an oxygen concentration.
A manufacturing method of a semiconductor storage device, comprising:
- alternately stacking a plurality of material films and a plurality of first insulation films one layer at a time in a first direction to form a stack;
- forming a columnar body penetrating through the stack in the first direction;
- removing the material films to form a space between the first insulation films;
- and
- forming a conductive film on an inner wall of the space, where the conductive film containing molybdenum (Mo) containing a first material whose concentration is higher than an oxygen concentration;
- and
- forming a plurality of electrode films inside the conductive film in the space.
Dependencies are inferred from the claim text.