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US 2026/0277759 A1Published application
Memory device with independent plate line control
AssigneeMicron Technology, Inc.
InventorMakoto Kitagawa
Life of this patent
Estimating the term…
Abstract
A memory device can include an array of memory cells comprising groups of memory cells, the groups including at least one redundant group for repairing a defective group. The memory device can include a controller coupled to the array. Responsive to receiving a memory access command, the controller can detect whether a defective group is present. If a defect is present, sensing operations are not performed for the defective group. If no defect is present, sensing operations are not performed for the redundant group.
Claims20
A memory device comprising:
- an array of memory cells comprising multiple groups of memory cells, the groups including at least one redundant group for repairing a defective group;
- and
- a controller coupled to the array, wherein the controller is configured to:
- responsive to receiving a memory access command, provide a time delay before initiating sensing operations;
- during the time delay, load redundancy information into a sense amplifier circuit and a plate control circuit of the memory device, the redundancy information indicating whether a defective group is present in at least one of the groups of memory cells;
- based on the redundancy information, when a defective group is indicated, inhibit sensing operations for the defective group;
- and
- based on the redundancy information, when no defective group is indicated, inhibit sensing operations for the redundant group.
5 more elements
A memory device comprising:
- an array of memory cells comprising a plurality of groups of memory cells, the plurality of groups including at least one redundant group for repairing a defective group;
- and
- a controller coupled to the array, wherein the controller is configured to:
- responsive to receiving a memory access command, introduce a time delay before initiating sensing operations;
- during the time delay, load redundancy information into sense amplifier and plate control circuitry;
- based on the redundancy information, select a subset of the plurality of groups for sensing,
- wherein when a defective group is present in the plurality of groups, the selected subset comprises the redundant group and excludes the defective group, and
- wherein when no defective group is present in the plurality of groups, the selected subset comprises groups of the plurality of groups other than the redundant group;
- and
- perform sensing operations on the selected subset of groups.
7 more elements
A method comprising:
- receiving a memory access command at a controller of a memory device, the memory device comprising an array of memory cells comprising a plurality of groups of memory cells, the plurality of groups including at least one redundant group for repairing a defective group;
- responsive to receiving the memory access command, providing a time delay before initiating sensing operations;
- during the time delay, loading redundancy information into sense amplifier and plate control circuitry of the memory device;
- based on the redundancy information, selecting a subset of the plurality of groups for sensing,
- wherein when a defective group is present in the plurality of groups, the selected subset comprises the redundant group and excludes the defective group, and
- wherein when no defective group is present in the plurality of groups, the selected subset comprises groups of the plurality of groups other than the redundant group;
- and
- performing sensing operations on the selected subset of groups.
5 more elements
Dependencies are inferred from the claim text.