Lithography exposure system and lithography method using the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHui Ling CHEN, Yen Wei CHEN, Jih Hsing CHANG, Chien Liang LIN, Tzu Hsien WU, Yen Ting CHEN, Min Hsiang HSU
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Abstract
A method includes securing a photomask to a mask stage of a lithography exposure system. A lithography process is performed to a semiconductor wafer by using the photomask and the lithography exposure system. If the photomask is qualified is determined by a control device of the lithography exposure system. If the semiconductor wafer is transported to a next process station is determined according to a determined result of the control device.
Claims20
A method comprising:
- securing a photomask to a mask stage of a lithography exposure system;
- performing a lithography process to a semiconductor wafer by using the photomask and the lithography exposure system;
- determining if the photomask is qualified by a control device of the lithography exposure system;
- and
- determining if the semiconductor wafer is transported to a next process station according to a determined result of the control device.
A lithography exposure system, comprising:
- a mask stage configured to secure a photomask;
- a substrate stage configured to secure a semiconductor wafer;
- a light source configured to emit radiation to the photomask, wherein the radiation patterned by the photomask is directed to the semiconductor wafer;
- and
- a control device configured to determine if the photomask is qualified to be used in a lithography process to pattern the semiconductor wafer.
A method comprising:
- performing an exposure process to a photoresist layer of a semiconductor wafer by using a photomask secured on a mask stage of a lithography exposure system;
- inputting parameters of the photomask into a control device of the lithography exposure system;
- outputting a mask safety ranking list by the control device;
- and
- after the exposure process, determining whether the semiconductor wafer is held in the lithography exposure system according to the mask safety ranking list.
Dependencies are inferred from the claim text.