Reflective mask blank, refelctive mask, and method for producing reflective mask

Abstract

Provided is a reflective mask blank containing Pt and having low crystallinity. The reflective mask blank includes, in the following order, a substrate, a multilayer reflective film configured to reflect EUV light, a protective film and a phase shift film configured to cause a phase shift in EUV light, wherein the phase shift film contains Pt and at least one first element X1 selected from the group consisting of Cr, Hf, Ta and W, wherein the content of the first element X1 in the phase shift film is 10.0 atomic % or more and less than 70.0 atomic % relative to all atoms in the phase shift film, and wherein when the phase shift film is analyzed by X-ray photoelectron spectroscopy, the chemical shift of the Pt 4f7/2 peak is 0.3 eV or more.

Dependencies are inferred from the claim text.