# US 2026/0276844 A1 · Method for crystal processing

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- Number: US 2026/0276844 A1
- Document ID: US20260276844A1
- Status: Published application
- Kind: A1
- Application number: 19/676,785
- Filed: 2026-05-13
- Published: 2026-09-17
- Earliest claimed: 2023-11-15
- Assignees: Boya Advanced Materials Co., Ltd.
- Applicants: Boya Advanced Materials Co., Ltd.
- Inventors: Yu WANG; Weiming GUAN; Songlin HUANG
- Web page: https://patentgrep.com/patent/US20260276844A1

## CPC

- G01T 1/202: the detector being a crystal
- B24B 1/00: Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
- C30B 33/00: After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B31/00 takes precedence)
- C30B 33/06: Joining of crystals
- C30B 35/00: Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- G01N 21/41: Refractivity; Phase-affecting properties, e.g. optical path length (G01N21/21 takes precedence)
- G01T: MEASUREMENT OF NUCLEAR OR X-RADIATION (radiation analysis of materials, mass spectrometry G01N23/00; tubes for determining the presence, intensity, density or energy of radiation or particles H01J47/00)
- B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)

## Abstract

Embodiments of the present disclosure provide a method for crystal processing. The method for crystal processing includes: obtaining an initial crystal; determining a processing scheme for the initial crystal; and processing the initial crystal based on the processing scheme.

## Claims

### Claim 1

A scintillator crystal for a scintillator detector of a positron emission tomography (PET) apparatus, wherein a surface roughness of at least one outer surface of the scintillator crystal is within a range of 0.001 μm to 0.1 μm.

### Claim 2 (depends on 1)

The scintillator crystal according to claim 1, wherein a surface roughness of each side surface of the scintillator crystal is within a range of 0.01 μm to 0.1 μm.

### Claim 3 (depends on 1)

The scintillator crystal according to claim 1, wherein the at least one outer surface includes a grinding surface obtained by a grinding treatment, and a surface roughness of the grinding surface is within a range of 0.5 μm to 1.5 μm.

### Claim 4 (depends on 3)

The scintillator crystal according to claim 3, wherein the surface roughness of the grinding surface is within a range of 0.5 μm to 1 μm.

### Claim 5 (depends on 1)

The scintillator crystal according to claim 1, wherein the at least one outer surface includes a polishing surface obtained by a polishing treatment, and a surface roughness of the polishing surface is within a range of 0.001 μm to 0.08 μm.

### Claim 6 (depends on 1)

The scintillator crystal according to claim 1, wherein a surface roughness of a light-exiting surface of the scintillator crystal is less than 0.02 μm.

### Claim 7

A crystal array for a scintillator detector of a positron emission tomography (PET) apparatus, the crystal array being obtained by processing a plurality of scintillator crystals, wherein processing the plurality of scintillator crystals includes:
machining a surface roughness of at least one outer surface of the plurality of scintillator crystals to be within a range of 0.001 μm to 0.1 μm.

### Claim 8 (depends on 7)

The crystal array according to claim 7, wherein a surface roughness of each side surface of the scintillator crystals is within a range of 0.01 μm to 0.1 μm.

### Claim 9 (depends on 7)

The crystal array according to claim 7, wherein a difference in surface roughness between two surfaces of at least one scintillator crystal among the plurality of scintillator crystals is less than 0.99 μm.

### Claim 10 (depends on 7)

The crystal array according to claim 7, wherein a difference in surface roughness between two surfaces of at least one scintillator crystal among the plurality of scintillator crystals is less than 0.15 μm.

### Claim 11 (depends on 7)

The crystal array according to claim 7, wherein a reflective structure is provided between at least two adjacent scintillator crystals in the crystal array.

### Claim 12 (depends on 11)

The crystal array according to claim 11, wherein the reflective structure includes at least one of a reflective filling material, a reflective film, or a grinding surface.

### Claim 13 (depends on 12)

The crystal array according to claim 12, wherein a surface roughness of the reflective structure is less than 100 μm.

### Claim 14 (depends on 13)

The crystal array according to claim 13, wherein the surface roughness of the reflective structure is less than 50 μm.

### Claim 15 (depends on 12)

The crystal array according to claim 12, wherein the crystal array is obtained by processing an initial crystal array, and the initial crystal array is formed by bonding the plurality of scintillator crystals with the reflective filling material.

### Claim 16 (depends on 15)

The crystal array according to claim 15, wherein processing the initial crystal array includes:
performing at least one of a grinding treatment or a polishing treatment on a first surface and a second surface of the initial crystal array, wherein at least one of the first surface or the second surface is a light-exiting surface, and the first surface and the second surface are opposite surfaces.

### Claim 17 (depends on 16)

The crystal array according to claim 16, wherein a surface roughness of at least one of the first surface or the second surface after the polishing treatment is less than 0.1 μm.

### Claim 18 (depends on 7)

The crystal array according to claim 7, wherein the crystal array comprises a light-exiting surface, and a surface roughness of the light-exiting surface is not greater than 0.08 μm.

### Claim 19 (depends on 18)

The crystal array according to claim 18, wherein the surface roughness of the light-exiting surface is not greater than 0.02 μm.

### Claim 20 (depends on 7)

The crystal array according to claim 7, wherein the crystal array comprises a light-exiting surface and a surface opposite to the light-exiting surface, and a surface roughness of the surface opposite to the light-exiting surface is not greater than 2 μm.