Magnetic sensor
AssigneeTDK Corporation
InventorNorikazu OTA
Life of this patent
Estimating the term…
Abstract
A magnetic sensor includes a first magnetoresistive (MR) element, a second MR element, and a third MR element. The magnetization of a magnetization pinned layer of each of the first, second, and third MR elements includes a component in a first direction. The second MR element is arranged at a first interval from the first MR element in the first direction. The third MR element is arranged at a second interval from the first MR element in a second direction. The first interval is at least 0.5 times D and at most 3 times D, where D is the maximum dimension of at least one of the first, the second, and the third MR elements.
Claims19
A magnetic sensor comprising:
- a plurality of magnetoresistive elements each including a magnetization pinned layer having magnetization whose direction is fixed, a free layer that is capable of having a magnetic vortex structure, the center of the magnetic vortex structure being movable according to a target magnetic field, and an intermediate layer arranged between the magnetization pinned layer and the free layer, wherein
- the plurality of magnetoresistive elements include a first element, a second element, and a third element,
- magnetization of the magnetization pinned layer of each of the first element, the second element, and the third element includes a component in a first direction,
- the second element is arranged at a first interval from the first element in the first direction,
- the third element is arranged at a second interval from the first element in a second direction different from the first direction,
- each of the first element, the second element, and the third element has a planar shape in a plan view from a stacking direction of the magnetization pinned layer, the intermediate layer, and the free layer, the planar shape having a maximum dimension being a greatest distance between any two points on an outer edge of the planar shape, and
- the first interval is at least 0.5 times D and at most 3 times D, where D is the maximum dimension of at least one of the first element, the second element, and the third element.
A magnetic sensor comprising:
- a first magnetoresistive element;
- and a second magnetoresistive element arranged at a first interval from the first magnetoresistive element in a first direction, wherein each of the first magnetoresistive element and the second magnetoresistive element includes a magnetization pinned layer having magnetization whose direction is fixed, a free layer that is capable of having a magnetic vortex structure, the center of the magnetic vortex structure being movable according to a target magnetic field, and an intermediate layer arranged between the magnetization pinned layer and the free layer, the magnetization of the magnetization pinned layer includes a component in the first direction, each of the first magnetoresistive element and the second magnetoresistive element has a planar shape in a plan view from a stacking direction of the magnetization pinned layer, the intermediate layer, and the free layer, the planar shape having a maximum dimension being a greatest distance between any two points on an outer edge of the planar shape, and the first interval is at least 0.5 times D and at most 3 times D, where D is the maximum dimension of at least one of the first magnetoresistive element and the second magnetoresistive element.
A magnetic sensor comprising:
- a substrate including a first inclined surface and a second inclined surface each extending in a first direction and facing in different directions;
- and
- a plurality of magnetoresistive elements each including a magnetization pinned layer having magnetization whose direction is fixed, a free layer that is capable of having a magnetic vortex structure, the center of the magnetic vortex structure being movable according to a target magnetic field, and an intermediate layer arranged between the magnetization pinned layer and the free layer, wherein
- the plurality of magnetoresistive elements include
- a first element arranged on the first inclined surface,
- a second element arranged on the first inclined surface and spaced from the first element in the first direction,
- a third element arranged on the second inclined surface and spaced from the first element in a second direction different from the first direction,
- the magnetization pinned layer, the intermediate layer, and the free layer of each of the first element and the second element are stacked in a direction intersecting with the first inclined surface,
- the magnetization pinned layer, the intermediate layer, and the free layer of the third element are stacked in a direction intersecting with the second inclined surface,
- each of the first element, the second element, and the third element has a planar shape in a plan view from a stacking direction of the magnetization pinned layer, the intermediate layer, and the free layer, the planar shape having a maximum dimension being a greatest distance between any two points on an outer edge of the planar shape, and
- an interval between the first element and the third element in a third direction is at least 0.5 times D and at most 3 times D, where D is the maximum dimension of at least one of the first element, the second element, and the third element, the third direction being orthogonal to the first direction, intersecting with the second direction at an angle other than 90 degrees, and being parallel to the first inclined surface.
Dependencies are inferred from the claim text.