US 2026/0276597 A1Published application

Inspection apparatus, inspection method, and method for manufacturing semiconductor device

AssigneeKioxia Corporation

InventorsYoshio MIZUTA, Hikaru TAKAYANAGI

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Abstract

According to an inspection apparatus of an embodiment, a processor: causes a probe to emit a first ultrasonic wave from a second surface side to a reference point of a substrate; causes the probe to receive a first reflected wave reflected at the reference point; estimates a first time required for reception of a reflected wave reflected by a first cavity defect based on a time from when the first ultrasonic wave is emitted to when the first reflected wave is received, and sets a first detection period based on the first time; and estimates a second time required for reception of a reflected wave reflected by a second cavity defect based on a time from when the first ultrasonic wave is emitted to when the first reflected wave is received, and sets a second detection period based on the second time.

Claims16

Dependent claims

An inspection apparatus that detects a cavity defect in a structure by emitting an ultrasonic wave to a substrate including the structure on a first surface,

the inspection apparatus comprising:
a probe that transmits and receives the ultrasonic wave;
and
a processor that analyzes a reflected wave received by the probe, wherein
the cavity defect includes at least any of:
a first cavity defect located at a first distance from a second surface on an opposite side from the first surface;
and
a second cavity defect located at a second distance from the second surface, the second distance being larger than the first distance, and
the processor:
causes the probe to emit a first ultrasonic wave from a second surface side to a reference point;
causes the probe to receive a first reflected wave reflected at the reference point;
estimates a first time required for reception of a reflected wave reflected by the first cavity defect based on a time from when the first ultrasonic wave is emitted to the first reflected wave is received, and sets a first detection period based on the first time;
and
estimates a second time required for reception of a reflected wave reflected by the second cavity defect based on a time from when the first ultrasonic wave is emitted to when the first reflected wave is received, and sets a second detection period based on the second time.

11 more elements

An inspection method for detecting a cavity defect in a structure by emitting an ultrasonic wave to a substrate including the structure on a first surface, wherein

the cavity defect includes at least any of:
a first cavity defect located at a first distance from a second surface on an opposite side from the first surface;
and
a second cavity defect located at a second distance from the second surface, the second distance being larger than the first distance, and
detecting the cavity defect includes:
emitting a first ultrasonic wave from a second surface side to a reference point;
receiving a first reflected wave reflected at the reference point;
estimating a first time required for reception of a reflected wave reflected by the first cavity defect based on a time from when emitting the first ultrasonic wave to when receiving the first reflected wave, and setting a first detection period based on the first time;
and
estimating a second time required for reception of a reflected wave reflected by the second cavity defect based on a time from when emitting the first ultrasonic wave to when receiving the first reflected wave, and setting a second detection period based on the second time.

7 more elements

Dependencies are inferred from the claim text.