Material for chemical vapor deposition, film production method, and film
AssigneeL'Air Liquide Societe Anonyme Pour L'Etude Et L'Etude Et L'Exploitation Des Procedes Georges Claude
InventorsSunao KAMIMURA, Jamie GREER, Christian DUSSARRAT
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Abstract
The present invention provides a material for chemical vapor deposition, a film production method, and a film which are novel. Provided is a material for chemical vapor deposition represented by formula (1). (In the formula, E an is an oxygen atom, a sulfur atom, a selenium atom, or a tellurium atom. R1, R2, and R3, are each independently a hydrogen atom or a linear, branched, or cyclic C1-7 organic group, and at least one of R1, R2, and R3 includes a fluorine atom. A case where R1, R2, and R3 are all a hydrogen atom is excluded.
Claims13
A chemical vapor deposition material represented by formula (1) below
- wherein E is an oxygen atom, sulfur atom, selenium atom or tellurium atom;
- R1, R2 and R3 are each independently a hydrogen atom or a C1-7 straight-chain, branched or cyclic organic group;
- at least one of R1, R2 and R3 contains a fluorine atom;
- and R1, R2 and R3 are not all hydrogen atoms.
A film that contains a compound represented by LixOyFz, wherein
- 2.6
- ≤
- x
- ≤
- 4
- .3
- ,
- 1.8
- ≤
- y
- ≤
- 2.3
- ,
- and
- 4.3
- ≤
- z
- ≤
- 6
- .
- 6
- .
Dependencies are inferred from the claim text.