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US 2026/0274755 A1Published application
Antiferroelectric containing dysprosium and a manufacturing method thereof
AssigneesHyundai Motor Company, Kia Corporation, Korea Institute of Ceramic Engineering and Technology
InventorsHyung Suk Kim, Hyo Soon Shin, Dong Hun Yeo, Jeoung Sik Choi
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Abstract
An antiferroelectric and a method for manufacturing an antiferroelectric are disclosed herein. The antiferroelectric may have high permittivity and breakdown voltage by having a PbxLa1−x([Zr1−YSnY]ZTi1−Z) composition. The manufacturing of the antiferroelectric may be performed through appropriate mixing and dysprosium addition.
Claims9
A capacitor comprising:
- an antiferroelectric having a PbxLa1−x([Zr1−YSnY]ZTi1−Z) composition, wherein X, Y, and Z are individually within a range of 0 to 1;
- and
- an electrode disposed on a surface of the antiferroelectric,
- wherein the electrode comprises copper (Cu).
1 more element
Dependencies are inferred from the claim text.