Power semiconductor package including stacked contact clips, system and method for fabricating a power semiconductor package

A method for fabricating a power semiconductor package, the method comprising:

• providing a power electronic substrate comprising at least a first electrically conductive layer arranged on an electrically insulating layer;
• arranging a plurality of power semiconductor dies on the first electrically conductive layer, such that a first side of the power semiconductor dies faces the first electrically conductive layer and electrically coupling the power semiconductor dies to the first electrically conductive layer, wherein the power semiconductor dies form a half bridge circuit comprising at least one low side die and at least one high side die;
• connecting a first type electrode of the at least one low side die to a second type electrode of the at least one high side die using a first contact clip, wherein the second type electrode is arranged on a second side of the at least one high side die, opposite the first side, and wherein the first contact clip is arranged above the second side of the at least one high side die;
• connecting a second contact clip to a first type electrode on the first side of the at least one high side die, wherein an upper portion of the second contact clip is arranged vertically above the first contact clip;
• and
• encapsulating the power semiconductor dies with a molded body.