Semiconductor device

A semiconductor device comprising:

• a semiconductor element having a main body that includes a first surface and a second surface facing away from each other in a first direction;
• and
• a first terminal, a second terminal, a third terminal, and a fourth terminal each facing the second surface,
• wherein the semiconductor element has a first electrode, a second electrode, a third electrode, and a fourth electrode positioned closer to the second surface than the first surface,
• the first electrode, the second electrode, the third electrode, and the fourth electrode are conductively bonded to the first terminal, the second terminal, the third terminal, and the fourth terminal, respectively,
• when a first axis passing through a center of the first surface and extending in a second direction perpendicular to the first direction and a second axis passing through the center and extending in a third direction perpendicular to the first direction and to the second direction are assumed on the first surface,
• the first surface is partitioned into a first region positioned on one side of the second axis in the second direction, a second region positioned next to the first region in the third direction, a third region positioned next to the second region in the second direction, and a fourth region positioned next to the third region in the third direction and next to the first region in the second direction,
• the first electrode, the second electrode, the third electrode, and the fourth electrode overlap the first region, the second region, the third region, and the fourth region, respectively, when viewed in the first direction,
• the first terminal has a first junction region that faces the first electrode and has a position, a shape, and a size substantially same as those of the first electrode when viewed in the first direction,
• the second terminal has a second junction region that faces the second electrode and has a position, a shape, and a size substantially same as those of the second electrode when viewed in the first direction,
• the third terminal has a third junction region that faces the third electrode and has a position, a shape, and a size substantially same as those of the third electrode when viewed in the first direction,
• the fourth terminal has a fourth junction region that faces the fourth electrode and has a position, a shape, and a size substantially same as those of the fourth electrode when viewed in the first direction,
• in a case where the semiconductor element is rotated 90 degrees or 180 degrees around an axial center extending in the first direction and passing through the center,
• each of the first electrode, the second electrode, the third electrode, and the fourth electrode overlaps or comes close to one of the first junction region, the second junction region, the third junction region, and the fourth junction region when viewed in the first direction, and
• when it is assumed that, of the second electrode, the third electrode, and the fourth electrode, the one that overlaps or comes close to the first junction region when viewed in the first direction is a first specific electrode,
• and that, of the first electrode, the second electrode, the third electrode, and the fourth electrode, the one that overlaps or comes close to one of the second junction region, the third junction region, and the fourth junction region when viewed in the first direction is a second specific electrode,
• an area of that portion of the first junction region that extends outside the first specific electrode is greater than an area of one of those portions of the second junction region, the third junction region, and the fourth junction region that extend outside the second specific electrode, when viewed in the first direction.