Semiconductor device and manufacturing method

A semiconductor device, comprising:

• a semiconductor substrate having an element region and a terminal region surrounding the element region;
• a first electrode on a first side of the semiconductor substrate;
• a second electrode on a second side of the semiconductor substrate in the element region;
• an insulating film on the second side of the semiconductor substrate in the terminal region, the insulating film having a first portion with a first thickness and a second portion with a second thickness less than the first thickness;
• a control wiring on the insulating film in the terminal region;
• a terminal electrode with a portion on the semiconductor substrate with the insulating film interposed therebetween in the terminal region;
• and
• a protective film on the insulating film, the protective film directly contacting a first upper surface of the first portion of the insulating film.

A manufacturing method for a semiconductor device, the manufacturing method comprising:

• preparing a semiconductor substrate having an element region having an upper surface electrode and a terminal region surrounding the element region;
• forming an insulating film on the semiconductor substrate;
• forming a terminal electrode on the insulating film in the terminal region;
• forming a recess portion in the insulating film between the upper surface electrode and the terminal electrode, the recess portion being formed by partially removing the insulating film but the depth of the recess portion being less than a total thickness of the insulating film;
• and
• forming a protective film on the recess portion of the insulating film.