Serpentine structure for thin film resistors and a method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSunil Kumar SINGH, Christian John KELLY
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Abstract
A method of forming a TFR and a semiconductor device are provided. The method includes depositing a first interlayer dielectric (ILD) film on a substrate to define a vertical dimension of the TFR; patterning a first photoresist using a photomask to define a horizontal dimension of the TFR; etching the first ILD film using the patterned first photoresist to form a trench in the first ILD film; and depositing a resistive thin film material on the first ILD film and within the trench.
Claims20
A method of forming a thin film resistor (TFR), the method comprising:
- depositing a first interlayer dielectric (ILD) film on a substrate to define a vertical dimension of the TFR;
- patterning a first photoresist using a photomask to define a horizontal dimension of the TFR;
- etching the first ILD film using the patterned first photoresist to form a trench in the first ILD film;
- and
- depositing a resistive thin film material on the first ILD film and within the trench.
A semiconductor device, comprising:
- a substrate;
- a first interlayer dielectric (ILD) film disposed over the substrate, the first ILD film including a first trench;
- a resistive thin film material disposed within the first trench to form a thin film resistor (TFR), the first trench having a depth and a width corresponding to vertical and horizontal dimensions of the TFR, respectively;
- a second ILD disposed over the resistive thin film material;
- and
- a plurality of metal interconnects formed in the second ILD and connected to first and second ends of the TFR.
A method of forming a thin film resistor (TFR) in a back-end-of-line (BEOL) layer of a semiconductor device, the method comprising:
- depositing a first interlayer dielectric (ILD) film on a substrate;
- patterning a first photoresist on the first ILD film to define a serpentine-shaped pattern;
- etching the first ILD film using the patterned first photoresist to form a serpentine-shaped trench in the first ILD film;
- depositing a resistive thin film material on the first ILD film and within the trench;
- depositing a protective film on the resistive thin film material;
- patterning a second photoresist to define terminal regions of the TFR;
- etching the protective film and the resistive thin film material outside the terminal regions to form the TFR;
- depositing a second ILD film on the TFR and planarizing the second ILD film;
- and
- forming metal interconnects in the second ILD film to connect to the terminal regions of the TFR.
Dependencies are inferred from the claim text.