Methods for Reshaping Masking Layer Openings

A method of modifying an opening in a material layer stack provided on a substrate, the method comprising:

• forming a plurality of openings in the material layer stack, wherein each opening of the plurality of openings comprises a first side opposite a second side, a first end opposite a second end, and a set of connection areas between the first end and the first and second sides;
• and
• performing a first ion process on the material layer stack to modify one or more dimensions of the set of connection areas, wherein the first ion process comprises directing ions to a sidewall of the plurality of openings at a first non-zero angle relative to a normal direction extending from a top surface of the material layer stack.

An ion processing tool, comprising:

• a plasma chamber for generating plasma, wherein ions are extracted from the plasma and directed to a semiconductor device;
• and
• a main controller operatively coupled to plasma chamber, wherein the main controller is adapted to perform a first ion treatment to modify one or more dimensions of a set of connection areas of a plurality of openings formed through a material layer stack, wherein the material layer stack is formed atop a substrate, wherein the first ion treatment comprises directing ions to a sidewall of the plurality of openings at a first non-zero angle relative to a normal direction extending from a top surface of the material layer stack.