Semiconductor Device Carriers and Methods of Making and Using
AssigneeUTAC Headquarters Pte. Ltd.
InventorsRoel Adeva Robles, Chee Kay Chow
Life of this patent
Estimating the term…
Abstract
A first carrier has a first plate. A tape is disposed on the first plate. A second plate is disposed over the first plate. The second plate has a trench aligned to the tape and an opening formed through the second plate over the tape. A singulated semiconductor package is disposed on the tape in the opening of the second plate. A second carrier has a static datum and a movable datum. The movable datum is moved toward the static datum. An aperture substrate is disposed around the static datum and movable datum. A manufacturing process is performed on the aperture substrate.
Claims20
A carrier for manufacturing a semiconductor device, comprising:
- a first plate including a first opening and a second opening formed through the first plate;
- a tape disposed on the first plate between the first opening and second opening;
- and
- a second plate disposed over the first plate, wherein the second plate has,
- a trench aligned to the tape, wherein a first thickness of the second plate within the trench is less than a second thickness of the second plate adjacent to the trench, and wherein the tape is disposed in the trench while the second plate physically contacts the first plate adjacent to the trench, and
- a third opening formed through the second plate in the trench over the tape, first opening, and second opening, wherein the third opening of the second plate is configured to receive a singulated semiconductor package onto the tape.
A carrier for manufacturing a semiconductor device, comprising:
- a first plate including a first opening;
- a tape disposed on the first plate;
- and
- a second plate disposed over the first plate, wherein the second plate includes,
- a trench aligned to the tape, and
- a second opening formed through the second plate in the trench over the tape, wherein the second opening overlaps the first opening.
A method of making a semiconductor device, comprising:
- providing a first plate including a first opening;
- disposing a tape on the first plate;
- and
- disposing a second plate over the first plate, wherein the second plate includes,
- a trench aligned to the tape, and
- a second opening formed through the second plate in the trench over the tape, wherein the second opening overlaps the first opening.
Dependencies are inferred from the claim text.