Back to results
US 2026/0271634 A1Published application
Methods for depositing gap-filling fluids and related systems and devices
AssigneeASM IP Holding B.V.
InventorTimothee Blanquart
Life of this patent
Estimating the term…
Abstract
Methods and systems for manufacturing a structure comprising a substrate. The substrate comprises plurality of recesses. The recesses are at least partially filled with a gap filling fluid. The gap filling fluid comprises a Si—H bond.
Claims20
A system comprising:
- a reaction chamber, the reaction chamber comprising a substrate support and an upper electrode, the substrate support comprising a lower electrode;
- a radio frequency power source arranged to generate a radio frequency power waveform;
- a gas injection system fluidly coupled to the reaction chamber;
- a precursor gas source configured to introduce a silicon precursor and optionally a carrier gas into the reaction chamber;
- a reactant gas source configured to introduce a reactant into the reaction chamber;
- an exhaust;
- and
- a controller being arranged to cause the system to:
- introduce a substrate in the reaction chamber,
- introduce a silicon precursor into the reaction chamber, the silicon precursor comprising silicon and a halogen,
- generating a plasma in the reaction chamber, and
- introduce a reactant comprising a noble gas into the reaction chamber.
9 more elements
A system comprising:
- a reaction chamber, the reaction chamber comprising a substrate support and an upper electrode, the substrate support comprising a lower electrode;
- a radio frequency power source configured to generate a radio frequency power waveform;
- a gas injection system fluidly coupled to the reaction chamber;
- a precursor gas source configured to introduce a silicon precursor and optionally a carrier gas into the reaction chamber;
- a reactant gas source configured to introduce a reactant into the reaction chamber;
- an exhaust;
- and,
- a controller configured to cause components of the system to:
- introduce a substrate in the reaction chamber,
- perform a plurality of super cycles, each super cycle consisting of, in sequence, a deposition cycle, a purge, and a curing cycle,
- wherein the deposition cycle comprises:
- introducing a silicon precursor into the reaction chamber, the silicon precursor comprising silicon and a halogen,
- generating a direct plasma in the reaction chamber, and
- introducing a reactant into the reaction chamber, wherein the reactant consists of one or more of He, Ne, Ar, and Kr,
- wherein the curing cycle comprises generating a plasma from a gas consisting of Ar.
12 more elements
A system comprising:
- a reaction chamber, the reaction chamber comprising a substrate support and an upper electrode, the substrate support comprising a lower electrode;
- a radio frequency power source configured to generate a radio frequency power waveform;
- a gas injection system fluidly coupled to the reaction chamber;
- a precursor gas source configured to introduce a silicon precursor and optionally a carrier gas into the reaction chamber;
- a reactant gas source configured to introduce a reactant into the reaction chamber;
- an exhaust;
- and,
- a controller configured to cause components of the system to:
- introduce a substrate in the reaction chamber,
- perform a plurality of super cycles, each super cycle consisting of, in sequence, a deposition cycle, a purge, and a curing cycle,
- wherein the deposition cycle comprises:
- introducing a silicon precursor into the reaction chamber, the silicon precursor comprising silicon and a halogen,
- generating a direct plasma in the reaction chamber, and
- introducing a reactant into the reaction chamber, wherein the reactant comprises a noble gas,
- wherein the curing cycle comprises generating a plasma from a gas consisting of He.
12 more elements
Dependencies are inferred from the claim text.