Method for producing perovskite/silicon tandem solar cells

A method for manufacturing perovskite/silicon tandem solar cells, comprising at least the following steps:

• providing a (100)-oriented, monocrystalline silicon wafer (5),
• depositing a silicon dioxide layer (S) on a first side of the silicon wafer (5),
• applying a layer of photoresist (F) to the silicon dioxide layer (S);
• introducing a regular structure into the photoresist (F) by nano-embossing lithography using a stamp (P) to form a mask,
• Directed, reactive ion etching of the silicon dioxide layer (S) through the mask formed by the layer of photoresist (F) to transfer the structure of the mask into the silicon dioxide layer (S);
• Subsequently, wet chemical etching of the silicon wafer;
• Deposition of back-side functional layers on a second side of the silicon wafer (5) and deposition of at least the following functional layers—passivation layer, recombination layer, and hole-conductor layer (9)—on the first side of the silicon wafer;
• Subsequently, applying a perovskite layer (10) conforming to the structure by spin-coating a perovskite solution onto the hole-conductor layer (9)
• Salt-out of the perovskite solution followed by annealing, wherein the applied perovskite layer (10) has a layer thickness in the range of 300 nm to 700 nm;
• Deposition of front-side functional layers to complete the perovskite/silicon tandem solar cell,
• wherein
• the regular structure is formed from cylindrical holes, wherein the holes have a diameter in the range of 1 μm to 5 μm and the holes are spaced apart from one another in the range of 1.5 μm to 6 μm.