Display device including quantum layer and method for manufacturing the same

A method for manufacturing a display device, the method comprising:

• forming a first electrode in a first area and a second area of a substrate;
• forming a first electron transport layer in the first area of the substrate, on the first electrode;
• forming a quantum layer in the first area of the substrate, on the first electron transport layer;
• forming a hole layer in the first area of the substrate, on the quantum layer, and forming the hole layer on the second area of the substrate, on the first electrode;
• forming a light emitting layer in the second area of the substrate, on the hole layer;
• forming an electron layer in the first area of the substrate, on the hole layer, and forming the electron layer in the second area of the substrate, on the light emitting layer;
• and
• forming a second electrode in the first area of the substrate, and forming the second electrode in the second area of the substrate, on the electron layer,
• wherein the quantum layer comprises a first quantum dot of N type and a second quantum dot of P type.

An electronic device, comprising:

• a display device displaying an image;
• and
• a processor transmitting an image data signal to the display device,
• wherein the display device comprises:
• a substrate comprising a first area and a second area;
• a first electrode disposed in the first area and the second area of the substrate;
• a first electron transport layer disposed in the first area of the substrate, on the first electrode;
• a quantum layer disposed in the first area of the substrate, on the first electron transport layer;
• a hole layer disposed in the first area of the substrate, on the quantum layer, and further disposed in the second area of the substrate, on the first electrode;
• a light emitting layer disposed in the second area of the substrate, on the hole layer;
• an electron layer disposed in the first area of the substrate, on the hole layer, and further disposed in the second area of the substrate, on the light emitting layer;
• and
• a second electrode disposed in the first area of the substrate, and further disposed in the second area of the substrate, on the electron layer,
• wherein the quantum layer comprises a first quantum dot of N type and a second quantum dot of P type.