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US 2026/0271475 A1Published application
Thin film photodetector applied with new multilayer structure and method for manufacturing same
AssigneeChung Ang University Industry Academic Cooperation Foundation
InventorsDong Hwan WANG, Woong Sik JANG
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Abstract
According to an embodiment, a photodetector including a novel planar heterojunction structure is provided, which facilitates rapid charge transport at a donor-acceptor interface and blocks charge injection from a contact region having low barrier energy for each electrode, thereby improving the photocurrent performance of a device and reducing dark current.
Claims11
A photodetector comprising:
- a first electrode;
- a blocking layer disposed on the first electrode;
- a photosensitive layer disposed on the blocking layer;
- and
- a second electrode disposed on the photosensitive layer,
- wherein the photosensitive layer comprises a bulk heterojunction layer in which a second electron acceptor material and a first electron donor material are mixed on a thin film layer comprising a first electron acceptor material.
3 more elements
A method for manufacturing a photodetector, the method comprising:
- applying a blocking layer composition on a first electrode;
- coating a thin film layer comprising a first electron acceptor material on the first electrode to which the blocking layer composition is applied;
- forming a bulk heterojunction layer in which a second electron acceptor material and a first electron donor material are mixed through a transfer printing process on the thin film layer;
- and
- forming a second electrode on the bulk heterojunction layer.
2 more elements
A photodetector comprising:
- a first electrode;
- a ZnO layer disposed on the first electrode;
- a PC71BM thin film layer disposed on the ZnO layer;
- a mixed layer disposed on the PC71BM thin film layer and comprising PM6 and BTP-4F-12;
- and
- a second electrode disposed on the mixed layer.
3 more elements
Dependencies are inferred from the claim text.