US 2026/0271474 A1Published application

Photoelectric conversion element and photoelectric conversion apparatus

OwnerKaname Watariguchi, Tatsuya Ohsawa +3inventors

InventorsKANAME WATARIGUCHI, TATSUYA OHSAWA, NORIFUMI MURANAKA, MICHITAKA KITAHARA, TSUTOMU NISHIDA

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Abstract

A conversion element includes a layer containing a crystal having a perovskite structure. When the smaller one of the electrode area of the first electrode and the electrode area of the second electrode is represented by S [cm2], in a Nyquist plot based on the measurement results of an impedance, the maximum value Rrec [Ω] out of resistance values obtained by fitting an arc corresponding to the maximum value of a phase in a low frequency range with a parallel circuit of a resistance element and a constant phase element satisfies formula (E1): 1.0×104≤Rrec×S≤1.0×107 (E1), and the maximum value Rct [Ω] out of resistance values obtained by fitting an arc corresponding to the maximum value of the phase in a high frequency range with the parallel circuit of the resistance element and the constant phase element, and the Rrec satisfy formula (E2): Rrec/Rct≥25 (E2).

Claims29

Dependent claims

A photoelectric conversion element comprising:

a first electrode;
a second electrode;
and
a photoelectric conversion layer arranged between the first electrode and the second electrode, the photoelectric conversion layer containing a crystal having a perovskite structure,
wherein, when a smaller one of an electrode area of the first electrode and an electrode area of the second electrode is represented by S (cm2), and an impedance is measured by applying an AC voltage with a DC voltage component VDC=0 (V) and a root-mean-square of an AC voltage component Vrms=50 (mV) to the photoelectric conversion element while changing a frequency thereof from 1.0×10−2 (Hz) to 1.0×106 (Hz), in a plot in which a horizontal axis represents a frequency (Hz) and a vertical axis represents a phase (deg) based on measurement results of the impedance, a phase of the impedance has a maximum value in a low frequency range of 1.0×10−2 to less than 1.0×102 (Hz), and the phase of the impedance has a maximum value in a high frequency range of 1.0×102 to 1.0×106 (Hz), and
wherein, in a Nyquist plot in which a horizontal axis represents an impedance real part Z′ (Ω) and a vertical axis represents an impedance imaginary part Z″ (Ω) based on the measurement results of the impedance, a maximum value Rrec (Ω) out of resistance values obtained by fitting an arc corresponding to the maximum value of the phase in the low frequency range with a parallel circuit of a resistance element and a constant phase element satisfies formula (E1):
1.
0
×
1
⁢
0
4
≤
R
rec
×
S
≤
1.
×
1
⁢
0
7
,
(
E1
)
a maximum value Rct (Ω) out of resistance values obtained by fitting an arc corresponding to the maximum value of the phase in the high frequency range with the parallel circuit of the resistance element and the constant phase element, and the Rrec (Ω) satisfy formula (E2):
R
rec
/
R
ct
≥
2
⁢
5
(
E2
)
and an exponent Prec of the constant phase element obtained by the fitting performed to obtain the Rrec (Ω) satisfies formula (E3):
P
rec
≥
0
⁢
.80
.
(
E3
)

50 more elements

A photoelectric conversion apparatus comprising the photoelectric conversion element comprising:

a first electrode;
a second electrode;
and
a photoelectric conversion layer arranged between the first electrode and the second electrode, the photoelectric conversion layer containing a crystal having a perovskite structure,
wherein, when a smaller one of an electrode area of the first electrode and an electrode area of the second electrode is represented by S (cm2), and an impedance is measured by applying an AC voltage with a DC voltage component VDC=0 (V) and a root-mean-square of an AC voltage component Vrms=50 (mV) to the photoelectric conversion element while changing a frequency thereof from 1.0×10−2 (Hz) to 1.0×106 (Hz), in a plot in which a horizontal axis represents a frequency (Hz) and a vertical axis represents a phase (deg) based on measurement results of the impedance, a phase of the impedance has a maximum value in a low frequency range of 1.0×10−2 to less than 1.0×102 (Hz), and the phase of the impedance has a maximum value in a high frequency range of 1.0×102 to 1.0×106 (Hz), and
wherein, in a Nyquist plot in which a horizontal axis represents an impedance real part Z′ (Ω) and a vertical axis represents an impedance imaginary part Z″ (Ω) based on the measurement results of the impedance, a maximum value Rrec (Ω) out of resistance values obtained by fitting an arc corresponding to the maximum value of the phase in the low frequency range with a parallel circuit of a resistance element and a constant phase element satisfies formula (E1):
1.
0
×
1
⁢
0
4
≤
R
rec
×
S
≤
1.
×
1
⁢
0
7
,
(
E1
)
a maximum value Rct (Ω) out of resistance values obtained by fitting an arc corresponding to the maximum value of the phase in the high frequency range with the parallel circuit of the resistance element and the constant phase element, and the Rrec (Ω) satisfy formula (E2):
R
rec
/
R
ct
≥
2
⁢
5
(
E2
)
and an exponent Prec of the constant phase element obtained by the fitting performed to obtain the Rrec (Ω) satisfies formula (E3):
P
rec
≥
0
⁢
.80
.
(
E3
)

50 more elements

A photoelectric conversion element comprising:

a first electrode;
a second electrode;
a photoelectric conversion layer arranged between the first electrode and the second electrode, the photoelectric conversion layer containing a crystal having a perovskite structure;
and
a charge-transporting layer between the photoelectric conversion layer and the first electrode,
wherein the charge-transporting layer contains a charge-transporting material and an insulating resin on a surface of the photoelectric conversion layer,
wherein, when a smaller one of an electrode area of the first electrode and an electrode area of the second electrode is represented by S (cm2), and an impedance is measured by applying an AC voltage with a DC voltage component VDC=0 (V) and a root-mean-square of an AC voltage component Vrms=50 (m V) to the photoelectric conversion element while changing a frequency thereof from 1.0×10−2 (Hz) to 1.0×106 (Hz), in a plot in which a horizontal axis represents a frequency (Hz) and a vertical axis represents a phase (deg) based on measurement results of the impedance, a phase of the impedance has a maximum value in a low frequency range of 1.0×10−2 to less than 1.0×102 (Hz), and the phase of the impedance has a maximum value in a high frequency range of 1.0×102 to 1.0×106 (Hz), and
wherein, in a Nyquist plot in which a horizontal axis represents an impedance real part Z′ (Ω) and a vertical axis represents an impedance imaginary part Z″ (Ω) based on the measurement results of the impedance, a maximum value Rrec (Ω) out of resistance values obtained by fitting an arc corresponding to the maximum value of the phase in the low frequency range with a parallel circuit of a resistance element and a constant phase element satisfies formula (E1):
1.
0
×
1
⁢
0
4
≤
R
rec
×
S
≤
1.
×
1
⁢
0
7
(
E1
)
and a maximum value Rct (Ω) out of resistance values obtained by fitting an arc corresponding to the maximum value of the phase in the high frequency range with the parallel circuit of the resistance element and the constant phase element, and the Rrec (Ω) satisfy formula (E2):
R
rec
/
R
ct
≥
25.
(
E2
)

38 more elements

A photoelectric conversion apparatus comprising:

a photoelectric conversion element comprising:
a first electrode;
a second electrode;
a photoelectric conversion layer arranged between the first electrode and the second electrode, the photoelectric conversion layer containing a crystal having a perovskite structure;
and
a charge-transporting layer between the photoelectric conversion layer and the first electrode,
wherein the charge-transporting layer contains a charge-transporting material and an insulating resin on a surface of the photoelectric conversion layer,
wherein, when a smaller one of an electrode area of the first electrode and an electrode area of the second electrode is represented by S (cm2), and an impedance is measured by applying an AC voltage with a DC voltage component VDC=0 (V) and a root-mean-square of an AC voltage component Vrms=50 (mV) to the photoelectric conversion element while changing a frequency thereof from 1.0×10−2 (Hz) to 1.0×106 (Hz), in a plot in which a horizontal axis represents a frequency (Hz) and a vertical axis represents a phase (deg) based on measurement results of the impedance, a phase of the impedance has a maximum value in a low frequency range of 1.0×10−2 to less than 1.0×102 (Hz), and the phase of the impedance has a maximum value in a high frequency range of 1.0×102 to 1.0×106 (Hz), and
wherein, in a Nyquist plot in which a horizontal axis represents an impedance real part Z′ (Ω) and a vertical axis represents an impedance imaginary part Z″ (Ω) based on the measurement results of the impedance, a maximum value Rrec (Ω) out of resistance values obtained by fitting an arc corresponding to the maximum value of the phase in the low frequency range with a parallel circuit of a resistance element and a constant phase element satisfies formula (E1):
1.
0
×
1
⁢
0
4
≤
R
rec
×
S
≤
1.
×
1
⁢
0
7
(
E1
)
and a maximum value Rct (Ω) out of resistance values obtained by fitting an arc corresponding to the maximum value of the phase in the high frequency range with the parallel circuit of the resistance element and the constant phase element, and the Rrec (Ω) satisfy formula (E2):
R
rec
/
R
ct
≥
25.
(
E2
)

39 more elements

Dependencies are inferred from the claim text.

Facts

Application: 19/658,155Filed 24 Apr 2026
Priority: JP 2023-18475027 Oct 2023
Published: 10 Sep 2026
Term ends: Not estimatedThe source records don’t support an estimate.

Classification25 codes

H10K 30/30
Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation: comprising bulk…
H10K 85/50
Organic materials used in the body or electrodes of devices covered by this subclass: organic perovskites; Hybrid organic-inorganic perovskites…
C07D 487/22
Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 -…:…
H10K 30/151
Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2: the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2