Flip chip photodiode and manufacturing method thereof

A flip-chip photodiode, comprising:

• a mesa epitaxial layer having an intrinsic epitaxial layer, a first conductive type in-situ doped epitaxial layer, and a laser-sintered sidewall, wherein the intrinsic epitaxial layer is disposed on the first conductive type in-situ doped epitaxial layer, and the laser-sintered sidewall is disposed on an outer periphery of the first conductive type in-situ doped epitaxial layer to substantially block external light from entering the first conductive type in-situ doped epitaxial layer through the laser-sintered sidewall;
• a second conductive type epitaxial layer disposed on the mesa epitaxial layer;
• a transparent substrate;
• and
• an optical bonding layer bonding the transparent substrate to the second conductive type epitaxial layer, wherein when the external light enters the optical bonding layer through the transparent substrate, only a light with a specific waveband of the external light is allowed to pass therethrough, and other light of the external light other than the specific waveband is blocked.