Semiconductor photo detector and semiconductor device
AssigneeNTT, Inc.
InventorsTatsuro Hiraki, Yoshiho Maeda, Shinji Matsuo
Life of this patent
Estimating the term…
Abstract
A semiconductor photodetector includes cladding layers, a III-V compound semiconductor layer, an absorption layer made of a III-V compound semiconductor, a p-type layer and an n-type layer made of a III-V compound semiconductor, and electrodes. The absorption layer consists of a non-doped absorption layer made of a non-doped III-V compound semiconductor, a p-type absorption layer formed in a region where the absorption layer and the p-type layer are in contact and an n-type absorption layer formed in a region where the absorption layer and the n-type layer are in contact. The non-doped absorption layer has an absorption edge wavelength shorter than a wavelength of incident light.
Claims8
A semiconductor photodetector, comprising:
- a first cladding layer formed on a substrate;
- a III-V compound semiconductor layer formed on the first cladding layer;
- a second cladding layer formed on the semiconductor layer;
- an absorption layer made of a III-V compound semiconductor embedded in the semiconductor layer;
- a p-type layer made of a III-V compound semiconductor formed within the semiconductor layer horizontally next to and in contact with the absorption layer;
- an n-type layer made of a III-V compound semiconductor formed within the semiconductor layer in contact with the absorption layer on a side opposite to the p-type layer with the absorption layer interposed therebetween;
- a first electrode formed to connect to the p-type layer;
- and
- a second electrode formed to connect to the n-type layer, wherein
- the absorption layer includes:
- a non-doped absorption layer made of a non-doped III-V compound semiconductor;
- a p-type absorption layer formed in a region where the absorption layer and the p-type layer are in contact;
- and
- an n-type absorption layer formed in a region where the absorption layer and the n-type layer are in contact, and
- the non-doped absorption layer has an absorption edge wavelength shorter than a wavelength of incident light.
Dependencies are inferred from the claim text.