Photodiode and manufacturing method thereof

Abstract

A photodiode and a manufacturing method thereof are provided. The photodiode comprises a substrate, a first conductive type epitaxial layer, an intrinsic epitaxial layer, a second conductive type in-situ doped epitaxial layer, and a first laser sintered sidewall. The second conductive type in-situ doped epitaxial layer is disposed on the intrinsic epitaxial layer. The first laser sintered sidewall is disposed on an outer periphery of the second conductive type in-situ doped epitaxial layer to define an active region and substantially block external light from entering the second conductive type in-situ doped epitaxial layer through a device sidewall. The device sidewall is collectively defined by the sidewalls of the substrate, the first conductive type epitaxial layer, the intrinsic epitaxial layer, and the second conductive type in-situ doped epitaxial layer, and the first laser sintered sidewall is disposed inside the device sidewall.

Dependencies are inferred from the claim text.