Integrated circuit structure and method for fabricating the same

An integrated circuit structure, comprising:

• a vertical field-effect transistor, comprising:
• a bottom source/drain epitaxial structure;
• a channel layer over the bottom source/drain epitaxial structure;
• a top source/drain epitaxial structure over the channel layer;
• and
• a gate structure surrounding the channel layer from a top view;
• a top source/drain contact pad over the top source/drain epitaxial structure;
• a bottom source/drain contact pad below the bottom source/drain epitaxial structure;
• a conductive feature laterally aside the gate structure;
• and
• a gate metal via over the conductive feature.

An integrated circuit structure, comprising:

• a first vertical field-effect transistor, comprising:
• a first bottom source/drain epitaxial structure;
• a first channel layer over the first bottom source/drain epitaxial structure;
• a first top source/drain epitaxial structure over the first channel layer;
• and
• a first gate structure surrounding the first channel layer from a top view;
• a bottom source/drain contact pad below the first bottom source/drain epitaxial structure;
• a conductive feature in contact with a sidewall of a gate metal of the first gate structure from the top view;
• and
• a bottom power rail below and electrically coupled to the bottom source/drain contact pad.