Capacitance reduction for back-side power rail device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShi Ning Ju, Chih-Hao Wang, Kuo-Cheng Chiang, Kuan-Lun Cheng, Wen-Ting Lan
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Abstract
A semiconductor transistor device including a channel structure, gate structure, a first source/drain structure, a second source/drain structure, and a back-side source/drain contact. The gate structure overlies the channel structure. The first source/drain structure and the second source/drain structure are disposed on opposite endings of the channel structure. The back-side source/drain contact is disposed under the first source/drain structure. A line lies across the gate structure and the first source/drain structure. The line is parallel to an upper surface of the gate structure.
Claims20
A semiconductor transistor device, comprising:
- a channel structure;
- a gate structure overlying the channel structure;
- a first source/drain structure and a second source/drain structure disposed on opposite endings of the channel structure;
- and
- a back-side source/drain contact disposed under the first source/drain structure,
- wherein a line lies across the gate structure and the first source/drain structure, the line being parallel to an upper surface of the gate structure.
A semiconductor transistor device, comprising:
- a channel structure having a first side and a second side, the first side opposite to the second side;
- a gate structure disposed around the channel structure;
- a first source/drain structure disposed on the first side of the channel structure;
- a second source/drain structure disposed on the second side of the channel structure;
- and
- a back-side source/drain contact disposed under and contacting the first source/drain structure.
A method of forming a semiconductor transistor device, the method comprising:
- forming a fin structure over a substrate by alternately stacking first semiconductor layers and second semiconductor layers;
- forming a first source/drain epitaxial structure and a second source/drain epitaxial structure on opposite endings of the fin structure;
- removing the substrate and exposing the first source/drain epitaxial structure;
- and
- forming a back-side source/drain contact under and contacting the first source/drain epitaxial structure.
Dependencies are inferred from the claim text.