Electronic device, vapor chamber, and preparation method therefor
AssigneeHuawei Technologies Co., Ltd.
InventorsQiu Chen, Yu Huang, Linfang Jin, Yonglu Liu, Yang Luo
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Abstract
A vapor chamber includes a first metal layer, a second metal layer, and a capillary structure. The first metal layer includes a first body part and a first edge part. The second metal layer includes a second body part and a second edge part. A surface of the first edge part is connected to a surface of the second edge part to form a connection layer. A quantity of crystal grains whose grain sizes are less than or equal to 50 μm at the connection layer accounts for 70% or more.
Claims20
A vapor chamber, wherein the vapor chamber comprises:
- a first cover, comprising a first metal layer, wherein the first metal layer comprises a first body part and a first edge part disposed around a periphery of the first body part;
- a second cover, comprising a second metal layer, wherein the second metal layer comprises a second body part and a second edge part disposed around a periphery of the second body part, wherein a surface of the first edge part is connected to a surface of the second edge part to form a connection layer, and wherein the first body part and the second body part jointly enclose an accommodation cavity;
- and
- a capillary structure, located in the accommodation cavity and connected to the first body part, wherein in a direction perpendicular to a thickness direction of the connection layer, a quantity of crystal grains whose grain sizes are less than or equal to 50 μm at the connection layer having a length of at least 5 mm is 70% or more of a total quantity of crystal grains.
A method for preparing a vapor chamber, wherein the method for preparing the vapor chamber comprises:
- providing a first cover, a second cover, and a capillary structure, wherein the first cover comprises a first metal layer, wherein the first metal layer comprises a first body part and a first edge part disposed around a periphery of the first body part, wherein the second cover comprises a second metal layer, wherein the second metal layer comprises a second body part and a second edge part disposed around a periphery of the second body part, and wherein the capillary structure is connected to the first body part;
- and
- connecting the first edge part to the second edge part by performing first thermal processing on the first cover, the capillary structure, and the second cover that are sequentially stacked, , wherein in the first thermal processing, a temperature ranges from 150°C to 400°C, a pressure is greater than or equal to 30 MPa, and a time ranges from 30 min to 100 min.
An electronic device, comprising:
- a printed circuit board;
- a vapor chamber, wherein the vapor chamber comprises a first cover, comprising a first metal layer, and wherein the first metal layer comprises a first body part and a first edge part disposed around a periphery of the first body part;
- a second cover, comprising a second metal layer, wherein the second metal layer comprises a second body part and a second edge part disposed around a periphery of the second body part, wherein a surface of the first edge part is connected to a surface of the second edge part to form a connection layer, and wherein the first body part and the second body part jointly enclose an accommodation cavity;
- and
- a capillary structure, located in the accommodation cavity and connected to the first body part, wherein, in a direction perpendicular to a thickness direction of the connection layer, a quantity of crystal grains whose grain sizes are less than or equal to 50 μm at the connection layer having a length of at least 5 mm is 70% or more of a total quantity of crystal grains, and wherein the first cover is connected to the printed circuit board.
Dependencies are inferred from the claim text.