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US 2026/0270581 A1Published application
High dynamic range solid-state imaging device
AssigneeSony Semiconductor Solutions Corporation
InventorKoji OGAWA
Life of this patent
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Abstract
A radiation sensitive circuit continuously converts a first photocurrent generated by incident radiation into a pixel voltage signal VPR and outputs a gain control signal VGC based on a voltage level of the pixel voltage signal VPR. An active pixel circuit integrates a second photocurrent generated by incident radiation in an exposure period and converts a resulting electric charge into a pixel output voltage VSL at a conversion gain controllable by the gain control signal VGC.
Claims15
A solid-state imaging device, comprising:
- a radiation sensitive circuit configured to continuously convert a first photocurrent generated by incident radiation into a pixel voltage signal and outputs a gain control signal based on a voltage level of the pixel voltage signal;
- and
- an active pixel circuit configured to integrate a second photocurrent generated by incident radiation in an exposure period and convert a resulting electric charge into a pixel output voltage at a conversion gain controllable by the gain control signal.
Dependencies are inferred from the claim text.