Cleaning process for plasma process chamber

A method of using a plasma process chamber, the method comprising:

• performing a chamber cleaning process including:
• flowing a gas mixture comprising a halogen-containing gas into the plasma process chamber and exciting the halogen-containing gas to form a first plasma in the plasma process chamber by applying first radio frequency (RF) power to the halogen-containing gas using an RF generator operatively coupled with the plasma process chamber, and
• flowing oxygen (O2) gas into the plasma process chamber and exciting the O2 gas to form a second plasma in the plasma process chamber by applying second RF power to the O2 gas using the RF generator,
• wherein the chamber cleaning process does not include flowing silicon tetrachloride (SiCl4) into the plasma process chamber;
• and
• after completion of the chamber cleaning process, loading a semiconductor wafer into the plasma process chamber and performing a silicon etching process on the semiconductor wafer.

A method of cleaning a plasma process chamber, the method comprising:

• flowing a gas mixture comprising a halogen-containing gas into the plasma process chamber and exciting the halogen-containing gas to form a first plasma in the plasma process chamber by applying first radio frequency (RF) power to the halogen-containing gas using an RF generator operatively coupled with the plasma process chamber, and
• flowing oxygen (O2) gas into the plasma process chamber and exciting the O2 gas to form a second plasma in the plasma process chamber by applying second RF power to the O2 gas using the RF generator;
• wherein the first RF power is 1500 watts or less and the first plasma is formed at a pressure of 150 mTorr or less;
• and
• wherein the second plasma is formed in the plasma process chamber at a pressure of 5 mTorr or higher.