Apparatus for manufacturing semiconductor structures and method for manufacturing semiconductor structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorHSING-PIAO HSU
Life of this patent
Estimating the term…
Abstract
An apparatus for manufacturing a semiconductor structure includes a processing chamber configured to form a plasma; a first gas supply system configured to supply a first gas to the processing chamber; a gas conduit disposed between and in communication with the processing chamber and the first gas supply system; and a heating system disposed on the gas conduit and configured to heat the first gas flowing through the gas conduit and to provide a first heated gas to the processing chamber.
Claims20
An apparatus for manufacturing a semiconductor structure, comprising:
- a processing chamber configured to form a plasma;
- a first gas supply system configured to supply a first gas to the processing chamber;
- a gas conduit disposed between and in communication with the processing chamber and the first gas supply system;
- and
- a heating system disposed on the gas conduit and configured to heat the first gas flowing through the gas conduit and to provide a first heated gas to the processing chamber.
An apparatus for manufacturing a semiconductor structure, comprising:
- a processing chamber configured to extract an ion beam;
- a first gas supply system configured to supply a first gas to the processing chamber;
- a second gas supply system configured to supply a second gas to the processing chamber;
- a gas regulating system connecting the processing chamber to the first gas supply system and the second gas supply system;
- and
- a heating system disposed on the gas regulating system and configured to heat the first gas and the second gas flowing through the gas regulating system and to provide a first heated gas and a second heated gas.
A method for manufacturing a semiconductor structure, comprising:
- providing a first gas into a first gas conduit of a gas regulating system;
- heating the first gas while the first gas flows through the first gas conduit to provide a first heated gas;
- supplying the first heated gas into a processing device;
- and
- dissociating the first heated gas in the processing device to form a plasma.
Dependencies are inferred from the claim text.