System and method for adjusting an ion beam
AssigneeApplied Materials, Inc.
InventorEric Donald Wilson
Life of this patent
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Abstract
Ion beam implantation systems, devices, and methods for adjusting an ion beam. An ion beam implantation system includes a shutter component configured to adjust an ion beam received from an ion beam source and being incident on a wafer plane. The system includes a controller component communicatively coupled to the shutter component. The controller is configured to receive an ion beam implantation recipe and change a size of an aperture of the shutter component based the ion beam implantation recipe and one or more measurements of the ion beam.
Claims26
An ion beam implantation system, comprising:
- a shutter component configured to adjust an ion beam received from an ion beam source and being incident on a wafer plane;
- a controller component communicatively coupled to the shutter component, the controller is configured to
- receive an ion beam implantation recipe;
- and
- change a size of an aperture of the shutter component based the ion beam implantation recipe and one or more measurements of the ion beam.
A method, comprising:
- receiving, using a controller component of an ion beam implantation system, an ion beam implantation recipe, the ion beam implantation system including an ion beam source configured to generate an ion beam, the ion beam being incident on a wafer plane, a shutter component, and the controller component communicatively coupled to the shutter component;
- and
- changing, using the controller component, a size of an aperture of the shutter component based the ion beam implantation recipe and one or more measurements of the ion beam;
- and
- adjusting, using the controller component, the ion beam received from the ion beam source.
Dependencies are inferred from the claim text.