Memory devices configured to perform a refresh operation and method of performing a refresh operation with a memory device
AssigneeSK hynix Inc.
InventorsJung Yeon KIM, Seon Yeol KIM, Seng Min YANG
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Abstract
A memory device includes an address arithmetic circuit configured to generate a redundancy switching signal when a normal word line connected to a normal cell is designated as a target word line and a redundancy word line connected to a redundancy cell is designated as an adjacent word line so that a smart refresh operation is performed. The memory device also includes a redundancy control circuit configured to generate a redundancy activation signal based on the redundancy switching signal.
Claims35
A memory device comprising:
- an address arithmetic circuit configured to generate a redundancy switching signal when a normal word line connected to a normal cell is designated as a target word line and a redundancy word line connected to a redundancy cell is designated as an adjacent word line so that a smart refresh operation is performed;
- and
- a redundancy control circuit configured to generate a redundancy activation signal based on the redundancy switching signal.
A memory device comprising:
- a row hammering control circuit configured to generate an addition signal, a subtraction signal, and a holding signal based on a row hammering control signal, a spacing setting signal, a selection address, and a sequence signal;
- an arithmetic address generation circuit configured to generate an arithmetic address from the selection address based on the addition signal, the subtraction signal, and the holding signal;
- and
- a switching detection circuit configured to generate a redundancy switching signal and a normal switching signal based on the selection address, the addition signal, and the subtraction signal.
A method of performing a refresh operation, the method comprising:
- generating a redundancy switching signal as activated for a first smart refresh operation on a first adjacent word line when a target word line is a normal word line and the first adjacent word line is a first redundancy word line located at a set spacing from the target word line;
- and
- generating a redundancy activation signal as activated for the first smart refresh operation when the redundancy switching signal is activated.
Dependencies are inferred from the claim text.