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US 2026/0268970 A1Published application
Determination of a bias voltage to apply to one or more memory cells
AssigneeSilicon Storage Technology, Inc.
InventorHieu Van Tran
Life of this patent
Estimating the term…
Abstract
In one example, a method comprises programming a memory cell to store a value; applying a predetermined current to a bit line of the memory cell; and measuring a voltage of a control gate terminal of the memory cell to determine a bias. In another example, a system comprises a circuit to program a memory cell to store a value; and a circuit to apply a predetermined current to a bit line of the memory cell and to measure a voltage of a control gate terminal of the memory cell to determine a bias.
Claims7
A method comprising:
- programming a memory cell to store a value;
- applying a predetermined current to a bit line of the memory cell;
- and
- measuring a voltage of a control gate terminal of the memory cell to determine a bias.
1 more element
A system comprising:
- a circuit to program a memory cell to store a value;
- and
- a circuit to apply a predetermined current to a bit line of the memory cell and to measure a voltage of a control gate terminal of the memory cell to determine a bias.
Dependencies are inferred from the claim text.