Memory, access method therefor and electronic device

Abstract

The present disclosure provides a memory, an access method therefor and an electronic device. The memory comprises multiple memory cells, each memory cell comprising a first transistor and a second transistor; the first transistor is configured as a read transistor, and the second transistor is configured as a write transistor; the first transistor and the second transistor are sequentially distributed along a direction parallel to a substrate; the first transistor comprises a first gate electrode, a first semiconductor layer, a first electrode and a second electrode, and the second transistor comprises a second gate electrode, a second semiconductor layer, a third electrode and a fourth electrode; the first semiconductor layer is connected to the second semiconductor layer, and the second gate electrode multiplexes a back gate electrode of the first transistor, so that during a read operation, a second voltage is applied to the second gate electrode of the second transistor of a memory cell that does not need to be accessed, so as to adjust a threshold voltage of the first transistor, causing the first transistor of the memory cell that does not need to be accessed to be turned off. Using the present disclosure, data can be reliably read, and crosstalk can be avoided or effectively reduced.

Dependencies are inferred from the claim text.