Memory device generating voltage responsive to temperature and method of operating the same
AssigneeSK hynix Inc.
InventorsMin Hye KANG, Chang Won YANG
Life of this patent
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AssigneeSK hynix Inc.
InventorsMin Hye KANG, Chang Won YANG
Estimating the term…
A memory device includes a memory cell array including a plurality of memory cells, a temperature sensor configured to measure an internal temperature and generate a temperature compensation code corresponding to the internal temperature, a voltage control circuit configured to generate a conversion temperature code converted from the temperature compensation code, and a voltage generation circuit configured to output a compensation voltage obtained by compensating for a level of a voltage used in an operation on the memory cell array responsive to the conversion temperature code. The temperature sensor and the voltage control circuit are may be located at different positions relative to the memory cell array.
A memory device comprising:
A memory device including a memory cell array, comprising:
Dependencies are inferred from the claim text.