Silicon-based electro-optic phase modulator, chip, and related system

A chip, comprising a circuit and a silicon-based electro-optic phase modulator used in the circuit, wherein the silicon-based electro-optic phase modulator comprises a substrate, and an optical waveguide layer and an electrode layer that are stacked on the substrate, the optical waveguide layer comprises a first doped region, and a first PN junction and a second PN junction that are connected in series, and the electrode layer comprises a first electrode, a second electrode, and a third electrode, wherein

• the first PN junction is of a convex structure, one end of the first PN junction is connected to the first doped region, the other end of the first PN junction is connected to the second PN junction, and a carrier doping concentration in the first PN junction is lower than a carrier doping concentration in the second PN junction, and is lower than a carrier doping concentration in the first doped region;
• the first doped region is connected to the first electrode, and an end that is of the second PN junction and that is away from the first PN junction is connected to the second electrode, wherein the first electrode is configured to receive a radio frequency signal, and the second electrode is configured to be grounded;
• or the first electrode is configured to be grounded, and the second electrode is configured to receive a radio frequency signal;
• and
• an end that is of the second PN junction and that is close to the first PN junction is connected to the third electrode, and the third electrode is configured to receive a direct current bias voltage.

An electro-optic phase modulation system, comprising a direct current power supply, a plurality of antenna elements, and a plurality of silicon-based electro-optic phase modulators, wherein

• each antenna element is connected to one silicon-based electro-optic phase modulator, each antenna element is configured to output a radio frequency signal to the corresponding silicon-based electro-optic phase modulator, the direct current power supply is connected to the plurality of silicon-based electro-optic phase modulators, and the direct current power supply is configured to provide a direct current bias voltage for each silicon-based electro-optic phase modulator, and wherein each of the plurality of silicon-based electro-optic phase modulators comprises a substrate, and an optical waveguide layer and an electrode layer that are stacked on the substrate, the optical waveguide layer comprises a first doped region, and a first PN junction and a second PN junction that are connected in series, and the electrode layer comprises a first electrode, a second electrode, and a third electrode, wherein
• the first PN junction is of a convex structure, one end of the first PN junction is connected to the first doped region, the other end of the first PN junction is connected to the second PN junction, and a carrier doping concentration in the first PN junction is lower than a carrier doping concentration in the second PN junction, and is lower than a carrier doping concentration in the first doped region;
• the first doped region is connected to the first electrode, and an end that is of the second PN junction and that is away from the first PN junction is connected to the second electrode, wherein the first electrode is configured to receive a radio frequency signal, and the second electrode is configured to be grounded;
• or the first electrode is configured to be grounded, and the second electrode is configured to receive a radio frequency signal;
• and
• an end that is of the second PN junction and that is close to the first PN junction is connected to the third electrode, and the third electrode is configured to receive a direct current bias voltage.