System for and method of inspecting semiconductor devices, and method of manufacturing the devices including the method

A method of inspecting semiconductor devices, the method comprising:

• selecting, based on a semiconductor device, a type of a target structure and a type of a target defect to be inspected;
• selecting a filter based on the target structure and the target defect;
• performing an ultrasonic signal simulation based on the target structure;
• selecting, based on the ultrasonic signal simulation, a type of a probe configured to generate an ultrasonic signal by applying a vibration to the semiconductor device;
• setting a frequency of the vibration based on the ultrasonic signal simulation;
• generating the ultrasonic signal by applying, using the tip, the vibration to the semiconductor device;
• measuring the ultrasonic signal;
• processing the measured ultrasonic signal using the selected filter;
• performing a fitting for each of a signal generated by the ultrasonic signal simulation and the processed measured ultrasonic signal;
• determining an accuracy of the fitting;
• wherein, when the determined accuracy does not satisfy a reference value, the method further comprises:
• repeating, based on a reference tool comprising a different filter and a different ultrasonic signal simulation, the performing the fitting and the determining the accuracy of the fitting;
• wherein, when the determined accuracy satisfies the reference value, the method further comprises:
• quantifying one or more measurement values for the target structure and/or the target defect;
• wherein the measuring the ultrasonic signal further comprises:
• measuring a signal based on a vertical stack of the semiconductor device;
• measuring a reference signal;
• and
• measuring a target structure of the semiconductor device.

A method of manufacturing a semiconductor device, the method comprising:

• preparing a wafer;
• performing a semiconductor process on the wafer;
• performing a shape profile inspection on the wafer subjected to the semiconductor process;
• and
• performing a subsequent semiconductor process,
• wherein the performing the shape profile inspection comprises:
• selecting respective types of a target structure and a target defect to be inspected;
• selecting a filter based on the target structure and the target defect;
• performing an ultrasonic signal simulation based on the target structure;
• selecting, based on the ultrasonic signal simulation, a type of a probe configured to generate an ultrasonic signal by applying a vibration to the semiconductor device;
• setting a frequency of the vibration based on the ultrasonic signal simulation;
• generating the ultrasonic signal by applying, using the tip, the vibration to the semiconductor device;
• measuring the ultrasonic signal;
• processing the measured ultrasonic signal using the selected filter;
• performing a fitting for each of a signal generated by the ultrasonic signal simulation and the processed measured ultrasonic signal;
• determining an accuracy of the fitting;
• wherein, when the determined accuracy does not satisfy a reference value, the performing the shape profile inspection further comprises:
• repeating, based on a reference tool comprising a different filter and a different ultrasonic signal simulation, the performing the fitting and the determining the accuracy of the fitting;
• wherein, when the determined accuracy satisfies the reference value, the performing the shape profile inspection further comprises:
• quantifying one or more measurement values for the target structure and/or the target defect;
• wherein the measuring the ultrasonic signal further comprises:
• measuring a signal based on a vertical stack of a semiconductor device;
• measuring a reference signal;
• measuring the target structure of the semiconductor device;
• generating an arbitrary waveform;
• transmitting the generated arbitrary waveform to a signal transmission and reception apparatus included in a system configured to inspect semiconductor devices;
• and
• switching a type of a signal of the signal transmission and reception apparatus to a pulse or an echo,
• wherein, when the type of the signal is switched to the pulse, the measuring the ultrasonic signal further comprises:
• generating an ultrasonic pulse as the pulse, by a signal transmission portion of the signal transmission and reception apparatus;
• and
• transmitting, by the signal transmission portion, the ultrasonic pulse to the semiconductor device;
• wherein information of the echo, which is based on the semiconductor device and received by a signal receiving portion of the signal transmission and reception apparatus, is transmitted to a switch portion of the signal transmission and reception apparatus,
• wherein, when the type of the signal is switched to the echo, the measuring the ultrasonic signal further comprises:
• measuring the echo using an oscilloscope;
• and
• collecting data measured by the oscilloscope using data acquisition (DAQ).