Manufacturing method of silicon carbide wafer

A manufacturing method of a silicon carbide wafer using a silicon carbide wafer manufacturing apparatus that includes a reaction chamber, a mounting unit disposed in the reaction chamber, and a heating device, the manufacturing method comprising:

• preparing a seed substrate composed of silicon carbide and having an off angle;
• placing a rear surface of the seed substrate on a mounting surface of a susceptor portion of the mounting unit such that the seed substrate is surrounded by a guide portion of the mounting unit disposed on the susceptor portion;
• and
• step-flow growing an epitaxial layer on a front surface of the seed substrate by introducing a reactant gas into the reaction chamber and heating the seed substrate using the heating device, wherein
• during the step-flow growing, a first distance between the seed substrate and the guide portion on an upstream side in a step-flow growth direction is smaller than a second distance between the seed substrate and the guide portion on a downstream side in the step-flow growth direction, and the guide portion is maintained at a temperature lower than a temperature of the seed substrate.