Secondary translating susceptor for superconductor manufacturing
AssigneeMetOx Technologies, Inc.
InventorChristopher SHAY
Life of this patent
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Abstract
A multi-part susceptor assembly used in a deposition reactor provides heat input and controls the temperature of a substrate tape as well as minimizes the build-up of errant deposition material. The susceptor heats a substrate tape within the reactor upon which one or more thin films are deposited, particularly high temperature superconductor (HTS) thin films produced in a MOCVD reactor.
Claims20
A susceptor assembly (200/300) for heating and temperature control of one or more longitudinal substrate tapes (120) within a deposition apparatus, the susceptor assembly (200/300) comprising:
- a primary susceptor (210/310) for heating at least one longitudinal substrate tape (120);
- a secondary susceptor (220) disposed between the primary susceptor (210) and the longitudinal substrate tape (120);
- and
- wherein the secondary susceptor (220) is configured as a longitudinal tape having a width greater than a substrate tape (120).
A susceptor assembly (300) for heating and temperature control of one or more longitudinal substrate tapes (120) within a deposition apparatus, the susceptor assembly (200/300) comprising:
- a primary susceptor (310) for heating more than one longitudinal substrate tape (120) comprised of two or more adjacent raised sections (330) extending vertically from the upper surface of the primary susceptor block (310) wherein each raised section is configured to heat a separate longitudinal substrate tape (120), wherein each raised section (330) is separated by a gap (340) from an adjacent raised section (330), wherein the gap (340) separating adjacent raised sections (330) forms a channel (350) to collect errant deposition material (180) from between adjacent longitudinal substrate tapes (120);
- a secondary susceptor (220) disposed between the primary susceptor (310) and the longitudinal substrate tape (120);
- and
- wherein the secondary susceptor (220) is configured as a longitudinal tape having a width greater than a substrate tape (120).
A chemical vapor deposition (CVD) apparatus (700) for deposition of thin films on a longitudinal substrate tape (120), the apparatus (700) comprising:
- a reactor housing (190) having an inlet showerhead (150) for introducing a precursor (140), a vacuum exhaust (130);
- and an illumination source (160);
- a susceptor assembly (200/300) located within the reactor housing (720) comprising a primary susceptor (210/310) for heating at least one longitudinal substrate tape (120), a secondary susceptor (220) disposed between the primary susceptor (210/310) and the longitudinal substrate tape (120), and wherein the secondary susceptor (220) is configured as a longitudinal tape having a width greater than a longitudinal substrate tape (120);
- and
- wherein the primary susceptor (210/310) is stationary and the secondary susceptor (220) translates in a lengthwise direction relative to the longitudinal substrate tape (120), and
- wherein the longitudinal substrate tape (120) is configured to translate above the secondary susceptor (210) and below the inlet showerhead (150).
Dependencies are inferred from the claim text.