Crystal sensor and thin-film deposition device including the same

A thin-film deposition device comprising:

• a chamber;
• a support placed inside the chamber and which supports a substrate;
• a deposition unit located opposite to the support and which performs a process of depositing a deposition material on the substrate;
• and
• a crystal sensor installed adjacent to the deposition unit and which detects a deposition rate of the deposition material,
• wherein the crystal sensor comprises:
• a crystal disc;
• and
• an electrode layer on the crystal disc,
• wherein a binding energy between the electrode layer and the deposition material is calculated using Vienna Ab initio Simulation Package (VASP), and satisfies the following equation:
• E
• A
• -
• (
• E
• B
• +
• E
• C
• )
• ≤
• -
• 3
• ⁢
• eV
• ,
• wherein EA denotes a total enthalpy of the electrode layer and the deposition material calculated using the VASP when the electrode layer and the deposition material are bonded together, EB denotes an enthalpy of the electrode layer calculated using the VASP when the electrode layer is not bonded with the deposition material, and EC denotes an enthalpy of the deposition material calculated using the VASP when the deposition material is not bonded with the electrode layer.