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US 2026/0264106 A1Published application
Substrate-processing method
AssigneeTokyo Electron Limited
InventorsDaisuke OBA, Nobuo Matsuki, Yoshinori Morisada
Life of this patent
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Abstract
A substrate-processing method includes a) forming a flowable oligomer on a substrate, the flowable oligomer containing carbon; and b) exposing the substrate to a plasma of a modification gas containing carbon and hydrogen, thereby modifying the flowable oligomer and forming a carbon-containing film.
Claims20
A substrate-processing method, comprising:
- a) forming a flowable oligomer on a substrate, the flowable oligomer containing carbon;
- and
- b) after completion of the formation of the flowable oligomer, performing a plasma modification process using a modification gas containing carbon, hydrogen, and nitrogen, thereby modifying the flowable oligomer and forming a carbon-containing film.
The substrate-processing method according to claim 8, wherein
- the silicon-containing gas is silane, disilane, trisilane, tetrasilane, or a high-order silane.
A substrate-processing method, comprising:
- a) forming a flowable oligomer on a substrate, the flowable oligomer containing carbon;
- and
- b) after completion of the formation of the flowable oligomer, performing a plasma modification process using a modification gas containing carbon, hydrogen, nitrogen, and Si, thereby modifying the flowable oligomer and forming a carbon-containing film.
Dependencies are inferred from the claim text.