Electrostatic chuck, substrate processing apparatus, and substrate processing method
AssigneeTokyo Electron Limited
InventorsEinosuke TSUDA, Satoshi TAKEDA, Shunichi KUSAKA, Yasuyuki KAGAYA
Life of this patent
Estimating the term…
Abstract
An electrostatic chuck for electrostatically attracting a substrate includes: a first base having an upper surface on which the substrate is placed; and a second base disposed on a lower surface side of the first base, wherein the first base includes a plate-shaped member made of a composite material of metal and ceramics, and an insulating layer having insulating properties and formed in a layered structure on an upper surface of the plate-shaped member, and wherein the second base is made of a material having a coefficient of thermal expansion close to a coefficient of thermal expansion of the composite material.
Claims16
An electrostatic chuck for electrostatically attracting a substrate, comprising:
- a first base having an upper surface on which the substrate is placed;
- and
- a second base disposed on a lower surface side of the first base,
- wherein the first base includes a plate-shaped member made of a composite material of metal and ceramics, and an insulating layer having insulating properties and formed in a layered structure on an upper surface of the plate-shaped member, and
- wherein the second base is made of a material having a coefficient of thermal expansion close to a coefficient of thermal expansion of the composite material.
A substrate processing apparatus, comprising:
- an electrostatic chuck configured to electrostatically attract a substrate;
- and
- a processing chamber in which the electrostatic chuck is accommodated and in which a film formation process is performed on the substrate while the substrate is electrostatically attracted to the electrostatic chuck,
- wherein the electrostatic chuck includes:
- a first base having an upper surface on which the substrate is placed;
- and
- a second base disposed on a lower surface side of the first base,
- wherein the first base includes a plate-shaped member made of a composite material of metal and ceramics, and an insulating layer having insulating properties and formed in a layered structure on an upper surface of the plate-shaped member, and
- wherein the second base is made of a material having a coefficient of thermal expansion close to a coefficient of thermal expansion of the composite material.
A substrate processing method of performing a film formation process on a substrate,
- wherein, when performing the film formation process on the substrate, the substrate is electrostatically attracted to an electrostatic chuck,
- wherein the electrostatic chuck includes:
- a first base having an upper surface on which the substrate is placed;
- and
- a second base disposed on a lower surface side of the first base,
- wherein the first base includes a plate-shaped member made of a composite material of metal and ceramics, and an insulating layer having insulating properties and formed in a layered structure on an upper surface of the plate-shaped member, and
- wherein the second base is made of a material having a coefficient of thermal expansion close to a coefficient of thermal expansion of the composite material.
Dependencies are inferred from the claim text.