Film forming method and film forming apparatus

Abstract

A film forming method includes (A) forming a first nitride film on a substrate, without supplying a source gas to the substrate, by decomposing at least a portion of a reaction product of the source gas and a nitriding gas and depositing the portion of the reaction product on the substrate in a state in which the reaction product has already been deposited on a member inside a processing chamber, the source gas containing an element to be nitrided and a halogen element. Decomposing at least the portion of the reaction product includes generating plasma inside the processing chamber and causing the plasma to impinge on the reaction product.

Dependencies are inferred from the claim text.