Method of stabilizing perovskite single crystal

Abstract

The present disclosure relates to a method of stabilizing a perovskite single crystal, and to a perovskite thin film and an optoelectronic device prepared using the same. According to embodiments of the present disclosure, a method of stabilizing a perovskite single crystal enables the alpha phase of the single crystal present immediately after preparation to be maintained, as compared with conventional methods in which a prepared single crystal is sealed and stored. Further, while the alpha phase of the single crystals present immediately after fabrication is maintained, the peak intensity for (100) crystal plane may be enhanced, thereby improving crystallinity. Such stabilized perovskite single crystals may be used to prepare a high-purity precursor solution. When a thin film is prepared using the precursor solution, defects generated during thin-film preparation processes can be reduced. Accordingly, the prepared perovskite thin film may exhibit a low trap density and excellent long-term stability.

Dependencies are inferred from the claim text.