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US 2026/0262322 A1Published application
Passivated contact structure, solar cell and preparation method therefor, and photovoltaic module
AssigneeTongwei Solar (Meishan) Co., Ltd.
InventorFan ZHOU
Life of this patent
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Abstract
In one aspect, a passivated contact structure includes a passivation oxide layer arranged close to a silicon wafer of a solar cell and a doped crystalline silicon layer away from the silicon wafer, wherein the thickness of the passivated oxide layer is 1.5 nm to 3.5 nm, and several nanoscale micropores are distributed in the passivated oxide layer.
Claims21
1-55. (canceled)
A passivated contact structure for a solar cell, comprising:
- a passivation oxide layer arranged proximate to a silicon wafer of the solar cell;
- and
- a doped crystalline silicon layer arranged away from the silicon wafer;
- wherein a thickness of the passivation oxide layer is 2 nm to 3.5 nm, and a plurality of nanoscale micropores are distributed in the passivation oxide layer;
- wherein the micropores extends through the passivation oxide layer, a diameter of the micropores is 50 nm to 500 nm, and a quantity of the micropores is 1×104 pores/cm2 to 1.6×108 pores/cm2;
- wherein the doped crystalline silicon layer is a fragmented crystalline silicon layer doped with a first element and a second element, the first element is phosphorus element or boron element, and the second element is at least one of nitrogen element, carbon element, or oxygen element;
- and
- wherein a thickness of the fragmented crystalline silicon layer is 40 nm to 200 nm, and a size of a crystalline grain of the fragmented crystalline silicon layer is 30 nm to 100 nm.
5 more elements
Dependencies are inferred from the claim text.