Semiconductor Device
AssigneeUnited Microelectronics Corp.
InventorKai-Kuen Chang
Life of this patent
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Abstract
A semiconductor device includes a substrate, two first field regions, a gate structure, a first isolation structure, and a plurality of second field regions. The two first field regions are disposed in the substrate, and the gate structure is disposed on the substrate, between the two first field regions. The first isolation structure is disposed in one of the two first field regions, under one side of the gate structure. The second field regions are disposed in the substrate, wherein the second field regions are separately and sequentially arranged to surround an outer periphery of the one of the two first field regions.
Claims13
A semiconductor device, comprising:
- a substrate;
- two first field regions, disposed in the substrate;
- a gate structure, disposed on the substrate, between the two first field regions;
- a first isolation structure, disposed in one of the two first field regions, under a first side of the gate structure;
- and
- a plurality of second field regions, disposed in the substrate, wherein the plurality of second field regions are separately arranged both in a first direction and a second direction which is perpendicular to the first direction, to surround an outer periphery of the one of the two first field regions.
Dependencies are inferred from the claim text.