Programming method for three-dimensional memory
AssigneeChengdu Pbm Technology Ltd.
InventorsZezhong PENG, Ke WANG
Life of this patent
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Abstract
A programming method for a three-dimensional memory includes: floating at least one of a high-voltage level input line and a low-voltage level input line of an unselected memory cell; and applying a first voltage level VH to a high-voltage level input line of a selected memory cell, and a second voltage level VL to a low-voltage level input line of the selected memory cell, where the first voltage level VH and the second voltage level VL satisfy the following relationship: VH>0 and VL<0, and a sum of an absolute value of the first voltage level VH and an absolute value of the second voltage level VL is equal to a preset programming voltage.
Claims2
A programming method for a three-dimensional memory comprising the following steps:
- (1) floating at least one of a high-voltage level input line and a low-voltage level input line of an unselected memory cell;
- and
- (2) applying a first voltage level VH to a high-voltage level input line of a selected memory cell, and a second voltage level VL to a low-voltage level input line of the selected memory cell,
- wherein the first voltage level VH and the second voltage level VL satisfy the following relationship:
- VH>0 and VL<0, and a sum of an absolute value of the first voltage level VH and an absolute value of the second voltage level VL is equal to a preset programming voltage.
Dependencies are inferred from the claim text.