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US 2026/0260147 A1Published application
Quantum bit device and manufacturing method of quantum bit device
AssigneeFujitsu Limited
InventorsShinichi HIROSE, Hiroyasu KAWANO, Norinao KOUMA
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Abstract
A quantum bit device includes a substrate, a quantum bit provided on a first surface of the substrate, a first conductive film provided on the first surface of the substrate, a through via that penetrates the substrate and is electrically connected to the first conductive film, and an anchor structure portion provided in the substrate around the through via and connected to a conductive film.
Claims18
A quantum bit device comprising:
- a substrate;
- a quantum bit provided on a first surface of the substrate;
- a first conductive film provided on the first surface of the substrate;
- a through via that penetrates the substrate and is electrically connected to the first conductive film;
- and
- an anchor structure portion provided in the substrate around the through via and connected to the first conductive film.
3 more elements
A manufacturing method of a quantum bit device, the method comprising:
- a process of forming an anchor structure portion in a substrate in a region around an intended formation position of a through via formed in the substrate;
- a process of forming a first conductive film on a first surface of the substrate, the first conductive film being connected to the anchor structure portion;
- a process of forming a through hole from a second surface of the substrate to reach the first surface;
- a process of forming the through via that penetrates the substrate and is electrically connected to the first conductive film;
- and
- a process of forming a quantum bit on the first surface of the substrate.
3 more elements
Dependencies are inferred from the claim text.