Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a plurality of memory blocks;
• and
• an anti-reflective layer on the plurality of memory blocks in a first direction, wherein the anti-reflective layer comprises a pattern, the pattern comprising two or more types of materials having different refractive indices from each other,
• wherein each of the plurality of memory blocks comprises a plurality of memory elements arranged with respect to each other in the first direction,
• wherein the plurality of memory blocks are arranged with respect to each other in a second direction crossing the first direction, and
• wherein a light reflectance of the anti-reflective layer is 25% or less.

A method of manufacturing a semiconductor device, the method comprising:

• forming a stacked material layer by alternately stacking at least one first material layer and at least one second material layer in a first direction, the at least one first material layer and the at least one second material layer having different refractive indices from each other;
• forming an anti-reflective material layer on the stacked material layer;
• and
• forming an anti-reflective layer from the anti-reflective material layer, and a stacked structure from the stacked material layer, by forming a through hole passing through the anti-reflective material layer and the stacked material layer,
• wherein a reflectance of the anti-reflective layer is 25% or less.